 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MRAL2023-3 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRAL2023-3 is a Common Base Device Designed for class C Amplifier Applications in L-Band FM Microwave Links. PACKAGE STYLE .250 2L FLG (C) FEATURES INCLUDE: * Gold Metallization * Emitter Ballasting * Input Matching MAXIMUM RATINGS IC VCES PDISS TJ TSTG JC O O 0.5 A 40 V 10 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 16 C/W O O O O 1 = COLLECTOR 2 = BASE 3 = EMITTER CHARACTERISTICS SYMBOL BVCES BVEBO ICBO hFE COB PG C IC = 20 mA TC = 25 C O TEST CONDITIONS IE = 1.0 mA VCB = 22 V VCE = 5.0 V VCB = 22 V VCE = 22 V POUT = 3.0 W IC = 200 mA f = 1.0 MHz f = 2000 to 2300 MHz MINIMUM TYPICAL MAXIMUM 40 3.5 1.0 10 5 8.0 8.5 45 UNITS V V mA --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
Price & Availability of MRAL2023-3
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |